Micron drops 4F² DRAM and bets on 3D DRAM
Micron's 1δ DRAM node ramps in the second half of 2027 with a mid-20% bit-density gain.
| Micron DRAM | |
|---|---|
| cell geometry | 6F² |
| node | 1δ |
| ship date | second half of 2027 |
| bit-density gain | mid-20% |
| 3D DRAM slot | between 1-zeta and 1-eta |
| supply | tight for at least two years |
Micron's 1δ DRAM node ramps in the second half of 2027 with a mid-20% bit-density gain. Vertical HBM and vertical edge inference memory join the roadmap.
DeBoer calls 4F² a cost trap. The 3D DRAM bet sits between 1-zeta and 1-eta.
Rivals keep 4F² moving. CXMT claims 4F² server DDR5 RDIMMs by the end of the year, and Samsung and SK hynix advance 4F² designs.
No consumer SKU, price, or yield curve for 1δ appears on the page. Whether 3D DRAM can beat a 4F² RDIMM before the supply squeeze eases is still open.
Vertical products use more wafers per bit than conventional DRAM. No wafer-cost figure is given.
Die Brief reads the move as a capacitor constraint, not a logic-node failure. The buyer gets a modest 1δ gain now and an unpriced 3D DRAM bet later.
Micron is betting on 3D DRAM while rivals keep 4F² alive.
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